GlobalFoundries awarded $35m US funding
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Source: siliconsemiconductor.net
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GloFo gets GaN-on-Si funding
GlobalFoundries has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GaN-on-silicon ICs at its
Source: electronicsweekly.com
GF to speed up production of next-Gen GaN chips
In partnership with the US Government, GlobalFoundries' semiconductor manufacturing facility in Vermont moves closer to large-scale production of next-gen gallium nitride (GaN) chips.
Source: evertiq.com
GF awarded $35M to accelerate GaN plans
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Source: compoundsemiconductor.net
GlobalFoundries Awarded $35 Million Funding from U.S. Government to Accelerate Manufacturing of Next-Generation GaN Chips
In partnership with U.S. Government, GF’s semiconductor manufacturing facility in Vermont continues to move closer to large-scale production of next-generation gallium nitride chips for use in...
Source: marketscreener.com