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JEDEC publishes guidelines for reverse-bias reliability evaluation of GaN power conversion devices : vimarsana.com
JEDEC publishes guidelines for reverse-bias reliability evaluation of GaN power conversion devices
Suggested stress conditions and test parameters for evaluating TDB reliability of GaN power transistors
Related Keywords
United States
,
Kurt Smith
,
Ron Barr
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Task Group
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Wide Bandgap Power Conversion Semiconductor Committee
,
Power Electronics Conference Exposition
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Solid State Technology Association
,
Estate Technology
,
Reverse Bias Reliability Evaluation
,
Gallium Nitride Power Conversion
,
Nitride Subcommittee
,
Power Conversion Semiconductor
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High Temperature Reverse Bias Stress
,
Application Specific
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Gan Focused Guideline
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Applied Power Electronics Conference
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Long Beach
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