CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon process close to state-of-the-art GaN/SiC performance
Technology suitable for 5G/6G infrastructure, satcom, radar for UAV detection and earth observation
San Francisco United States Erwan Morvan International Electron Devices Meeting Electron Devices In Situ Sin Gate Dielectric
Source: semiconductor-today.com