CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon process close to state-of-the-art GaN/SiC performance

Technology suitable for 5G/6G infrastructure, satcom, radar for UAV detection and earth observation

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France ,San Francisco ,California ,United States ,Erwan Morvan ,International Electron Devices Meeting ,Electron Devices ,In Situ Sin Gate Dielectric ,Low Temperature Ohmic ,