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Transphorm's TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications -October 10, 2023 at 08:33 am EDT
Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...
United States Wechat Transphorm Transphorm Inc Fundamental Advantages Mode Gan Recommended External Circuitry
Source: marketscreener.com
Transphorm's TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications Seite 1
10.10.2023 - Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s ... Seite 1
Source: wallstreet-online.de
Transphorm's TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications | Region
GOLETA, Calif.--(BUSINESS WIRE)--Oct 10, 2023--
Source: eagletribune.com
CGD's ICeGaN HEMTs Awarded "Best Demo" AT TSMC European Innovation Zone
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient
Source: siliconcanals.com
New Electronics - ST GaN driver integrates galvanic isolation for superior safety and reliability
STMicroelectronics has unveiled its first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, suitable for applications that require improved wide-bandgap efficiency along with robust safety and electrical protection.
Source: newelectronics.co.uk