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November 30, 2023
New Design Tools Enable Faster Growth of Two-Wheeler Market Design-Ins While Helping System Engineers Harness SuperGaN FET Advantages ...
November 16, 2023
Transphorm Inc. Nasdaq TGAN a global leader in robust GaN power semiconductors and Allegro MicroSystems Inc. Allegro Nasdaq ALGM a global leader in power and sensing semiconductor technology for motion control and energyefficient systems today announced a collaboration including Transphorms SuperGaN FETs and Allegros AHV85110 Isolated Gate Driver to enable the expansion of GaN power system design for high power applications.
October 10, 2023
Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...
October 10, 2023
GOLETA, Calif.--(BUSINESS WIRE)--Oct 10, 2023--
September 6, 2023
Robust GaN Power Semiconductor Leader Maps Out How Its Normally-Off D-Mode Platform Design Harnesses GaN’s Natural Benefits, Whereas Competitive E-Mode Designs Must Make Performance Compromises ...
August 29, 2023
Company to Highlight Onboard Charger, E-Bike Fast Charger, Other Design Boards for 2 and 3 Wheeled Vehicles, Charging Solutions, and Electric Cars ...
August 29, 2023
Company to Highlight Onboard Charger, E-Bike Fast Charger, Other Design Boards for 2 and 3 Wheeled Vehicles, Charging Solutions, and Electric Cars Transphorm, Inc. (NASDAQ:TGAN), a global leader in robust GaN power
August 29, 2023
Transphorm Inc. Nasdaq TGAN a global leader in robust GaN power semiconductors announced today that its electronica India displays will highlight the companys technology leadership for next generation electric vehicle power systems.
August 24, 2023
Groundbreaking Solar Panel Systems Deliver Higher Performance and Efficiency in Smaller, Lighter Form Factors Via Use of Transphorm’s Fundamentally Advanced GaN Devices ...
August 10, 2023
Transphorm Inc. Nasdaq TGAN a global leader in GaN power semiconductors the future of next generation power systems today announced it has demonstrated up to 5 microsecond short circuit withstand time SCWT on a GaN power transistor with a patented technology.