Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications – Consumer Electronics Net consumerelectronicsnet.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from consumerelectronicsnet.com Daily Mail and Mail on Sunday newspapers.
Renesas has developed two technologies that are able to reduce the energy and voltage application time for the write operation of spin-transfer torque magnetic random-access memory (STT-MRAM).