Renesas develops write technologies for embedded STT-MRAM

Renesas has developed two technologies that are able to reduce the energy and voltage application time for the write operation of spin-transfer torque magnetic random-access memory (STT-MRAM).

Related Keywords

San Francisco ,California ,United States , ,International Electron Devices Meeting ,Electron Devices Meeting ,Himram ,Memory ,Research ,Microcontrollers ,Tower ,Write Technology ,