E-Mail IMAGE: The device processing for the double-clamped GaN bridge resonator on Si substrate: (1) The as-grown GaN epitaxial film on Si substrate. Except for the AlN buffer layer, no strain removal layer is... view more Credit: Liwen Sang Liwen Sang, independent scientist at International Center for Materials Nanoarchitectonics, National Institute for Materials Science (also JST PRESTO researcher) developed a MEMS resonator that stably operates even under high temperatures by regulating the strain caused by the heat from gallium nitride (GaN). High-precision synchronization is required for the fifth generation mobile communication system (5G) with a high speed and large capacity. To that end, a high-performance frequency reference oscillator which can balance the temporal stability and temporal resolution is necessary as a timing device to generate signals on a fixed cycle. The conventional quartz resonator as the oscillator has the poor integration capability and its application is limited. Although a micro-electromechanical system (MEMS) (*1) resonator can achieve a high temporal resolution with small phase noise and superior integration capability, the silicon (Si)-based MEMS suffers from a bad stability at higher temperatures.