Credit: Korea Institute of Science and Technology(KIST) The Korea Institute of Science and Technology (KIST) has announced that the research team led by Dr. Kim Kyoung-Whan at the Center for Spintronics has proposed a new principle about spin memory devices, which are next-generation memory devices. This breakthrough presents new applicability that is different from the existing paradigm. Conventional memory devices are classified into volatile memories, such as RAM, that can read and write data quickly, and non-volatile memories, such as hard-disk, on which data are maintained even when the power is off. In recent years, related academic and industrial fields have been combining their advantages to accelerate the development of next-generation memory that is fast and capable of maintaining data even when the power is off.