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New Nanomagnetism Principle for Next-Generation Memory Devices Written by AZoNanoJan 13 2021 The Korea Institute of Science and Technology (KIST) reports that a team of researchers under Dr Kyoung-Whan Kim from the Center for Spintronics has come up with a new principle for spin memory devices—regarded as the next-generation memory devices. Dr Kyoung-Whan Kim at the Center for Spintronics, KIST. Image Credit: Korea Institute of Science and Technology. The advancement represents new applicability that varies from the current paradigm. Traditional memory devices are categorized into volatile ...

Credit: Korea Institute of Science and Technology(KIST) The Korea Institute of Science and Technology (KIST) has announced that the research team led by Dr. Kim Kyoung-Whan at the Center for Spintronics has proposed a new principle about spin memory devices, which are next-generation memory devices. This breakthrough presents new applicability that is different from the existing paradigm. Conventional memory devices are classified into volatile memories, such as RAM, that can read and write data quickly, and non-volatile memories, such as hard-disk, on which data are maintained even when th...