New Nanomagnetism Principle for Next-Generation Memory Devices
New Nanomagnetism Principle for Next-Generation Memory Devices Written by AZoNanoJan 13 2021 The Korea Institute of Science and Technology (KIST) reports that a team of researchers under Dr Kyoung-Whan Kim from the Center for Spintronics has come up with a new principle for spin memory devices—regarded as the next-generation memory devices. Dr Kyoung-Whan Kim at the Center for Spintronics, KIST. Image Credit: Korea Institute of Science and Technology. The advancement represents new applicability that varies from the current paradigm. Traditional memory devices are categorized into volatile ...
Source: azonano.com