New Nanomagnetism Principle for Next-Generation Memory Devices Written by AZoNanoJan 13 2021 The Korea Institute of Science and Technology (KIST) reports that a team of researchers under Dr Kyoung-Whan Kim from the Center for Spintronics has come up with a new principle for spin memory devices—regarded as the next-generation memory devices. Dr Kyoung-Whan Kim at the Center for Spintronics, KIST. Image Credit: Korea Institute of Science and Technology. The advancement represents new applicability that varies from the current paradigm. Traditional memory devices are categorized into volatile memories, like RAM, which can read and write data rapidly, and non-volatile memories, like hard-disk, on which data are retained even when there is no power.