CEA-Leti and Dolphin Design announce FD-SOI breakthrough
CEA-Leti and Dolphin Design announce FD-SOI breakthrough CEA-Leti and Dolphin Design have announced the development of an adaptive back-biasing (ABB) architecture for FD-SOI chips. This new architecture can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. Fully Depleted Silicon on Insulator (FD-SOI) is a technology that allows the biasing of the transistorâs body that acts as a back gate. Unlike conventional bulk technology, it enables a wide voltage range of the b...
Source: newelectronics.co.uk