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Our NanoNews Digest Sponsors Home > Press > CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows Abstract: CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. CEA-Leti & Dolphin...

CEA-Leti and Dolphin Design announce FD-SOI breakthrough CEA-Leti and Dolphin Design have announced the development of an adaptive back-biasing (ABB) architecture for FD-SOI chips. This new architecture can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. Fully Depleted Silicon on Insulator (FD-SOI) is a technology that allows the biasing of the transistor’s body that acts as a back gate. Unlike conventional bulk technology, it enables a wide voltage range of the b...

February 22, 2021 CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30% Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows GRENOBLE, France – Feb. 22, 2021 – CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. Fully Depleted S...