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Nanotechnology Now - Press Release: CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows

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Home > Press > CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows
Abstract:
CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques.
CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows ....

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CEA-Leti and Dolphin Design announce FD-SOI breakthrough

CEA-Leti and Dolphin Design announce FD-SOI breakthrough
CEA-Leti and Dolphin Design have announced the development of an adaptive back-biasing (ABB) architecture for FD-SOI chips.
This new architecture can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques.
Fully Depleted Silicon on Insulator (FD-SOI) is a technology that allows the biasing of the transistorâs body that acts as a back gate. Unlike conventional bulk technology, it enables a wide voltage range of the body bias which permits compensating for process, voltage, and temperature (PVT) variations by controlling the threshold voltage.
In switch operations, for example, when the switch is on, the body bias is changed to reduce the on-resistance by reducing threshold voltage and allowing more current to pass. That accelerates the circuit. In the off state, the body bias is changed ....

Dolphin Design , Depleted Silicon , Scalable Drivers Achieving , Frequency Boosting , Power Reduction , Fd Soi , Abb Architecture , டால்பின் வடிவமைப்பு , அதிர்வெண் அதிகரிக்கும் , பவர் குறைப்பு , ப்ட் சோய் , ஊடுநுல் கட்டிடக்கலை ,

CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%

February 22, 2021
CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%
Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows
GRENOBLE, France – Feb. 22, 2021 – CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques.
Fully Depleted Silicon on Insulator (FD-SOI) is a technology that allows the biasing of the transistor’s body that acts as a back gate. Unlike conventional bulk technology, FD-SOI enables a wide voltage range of the body bias. This permits compensating for process, voltage, and temperature (PVT) variations by controlling the threshold voltage. For example, in switch operations, when the swit ....

Andrea Bonzo , Energy Efficient Soc Design , Dolphin Design , Depleted Silicon , Scalable Drivers Achieving , Frequency Boosting , Power Reduction , Silicon Valley , Carnot Institutes , Dolphin Integration , Energy Efficient Soc , ஆண்ட்ரியா போன்சோ , ஆற்றல் திறமையான சமூக வடிவமைப்பு , டால்பின் வடிவமைப்பு , அதிர்வெண் அதிகரிக்கும் , பவர் குறைப்பு , சிலிக்கான் பள்ளத்தாக்கு , டால்பின் ஒருங்கிணைப்பு , ஆற்றல் திறமையான சமூக ,