CEA-Leti and Dolphin Design announce FD-SOI breakthrough CEA-Leti and Dolphin Design have announced the development of an adaptive back-biasing (ABB) architecture for FD-SOI chips. This new architecture can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. Fully Depleted Silicon on Insulator (FD-SOI) is a technology that allows the biasing of the transistorâs body that acts as a back gate. Unlike conventional bulk technology, it enables a wide voltage range of the body bias which permits compensating for process, voltage, and temperature (PVT) variations by controlling the threshold voltage. In switch operations, for example, when the switch is on, the body bias is changed to reduce the on-resistance by reducing threshold voltage and allowing more current to pass. That accelerates the circuit. In the off state, the body bias is changed to raise the off-resistance by increasing the threshold voltage, consequently reducing the leakage current. This shows that FD-SOI technology can be used either to accelerate the design or reduce the leakage power.