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Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of
Class-leading* unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 -- ROHM...
Class-leading* unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centers...
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, opt...
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