Stay updated with breaking news from Gan Systems. Get real-time updates on events, politics, business, and more. Visit us for reliable news and exclusive interviews.
FinancialContent fully hosted finance channel
(0) Ottawa, Ontario--(Newsfile Corp. - January 12, 2021) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN) and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry's first to provide programmable overcurrent protection with adjustable ...
GaN evaluation boards GaN Systems has launched several evaluation boards – the latest with MinDCet, an power semiconductor design house, for a 100V Half-Bridge evaluation kit. The 100V Half-Bridge evaluation kit provides testing capabilities for quick implementation. Thekit claims to show the ease-of-use, high performance, and flexibility of GaN transistor and driver combinations. The evaluation kit includes the MinDCet MDC901 GaN driver and two GaN Systems GS61008P E-mode GaN power transistors connected in a high-side, low-side configuration and all the necessary drive circuitry. The 100V ...
New evaluation boards from GaN Systems GaN Systems has launched several new evaluation boards â the latest with MinDCet, a power semiconductor design house, for a 100V Half-Bridge evaluation kit. The 100V Half-Bridge evaluation kit provides testing capabilities for quick implementation and demonstrates the ease-of-use, high performance, and flexibility of GaN transistor and driver combinations. The evaluation kit includes the MinDCet MDC901 GaN driver and two GaN Systems GS61008P E-mode GaN power transistors that are connected in a high-side, low-side configuratio...
3 months ago High voltage GaN HEMTs for hi-rel applications now available in lower current 15 A and 30 A versions MILPITAS, Calif.–(BUSINESS WIRE)–Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of products based on GaN Systems technology. The two new high-power HEMTs, TDG650E30B and TDG650E15B, deliver lower current performance of 30- and 15-amp respectively, while the original 650 V introduced last year, the TDG650E60, delivers 60 A. These 650 V GaN ...