Jet Calculator News Today : Breaking News, Live Updates & Top Stories | Vimarsana

Our selection of industry specific magazines cover a large range of topics.

Qorvo, a provider of innovative RF solutions, announced a next-generation series of 1200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with industry-leading figures of merit in on-resistance. The new UF4C/SC series of 1200V Gen 4 SiC FETs are suited for mainstream 800V bus architectures in onboard chargers for electric vehicles,...

650V and 1.2kV SiC FETs in D2PAK-7L UnitedSiC has introduced silicon carbide FETs in D2PAK-7L surface mount packages. They cover 650V and 1,200V operation, and have on-resistances from 30 to 80mΩ (650V) or 40 to 150mΩ (1.2kV). “The D2PAK-7L SiC FETs [have] a Kelvin source connection improving gate drive return performance,” according to the company. “Through the utilisation of silver sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate arrangements. In addition, they exhibit creepage and clearance figures of 6.7mm and 6.1mm respect...

UnitedSiC has launched a simple on-line design tool to calculate power losses and other parameters for power supplies using the company's silicon carbide t

March 16th, 2021, Princeton, New Jersey:UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched the FET-Jet Calculator, a simple, registration-free online tool that facilitates selection and performance comparison in different power applications and topologies. This new tool allows engineers to make design decisions quickly and with confidence. In order to identify the…