STMicroelectronics extends MasterGaN performance and value with new 200W and 500W devices
Geneva, Switzerland, December 4, 2023 – STMicroelectronics’ MasterGaN1L and MasterGaN4L introduce the next generation of integrated gallium-nitride (GaN) bridge devices that simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets. ST’s MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimized gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup.…
Source: eejournal.com