IIT Guwahati leads breakthrough in Wide Bandgap Semiconductors
A team of researchers, led by Ankush Bag, an Assistant Professor at the Department of Electronics and Electrical...
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A team of researchers, led by Ankush Bag, an Assistant Professor at the Department of Electronics and Electrical...
India News: Ankush Bag, Assistant Professor at the Department of Electronics and Electrical Engineering and Centre for Nanotechnology at the Indian Institute of T
Researchers at the Indian Institute of Technology have developed a semiconductor material that can withstand very high temperatures, and therefore be used in high-pressure automotive applications.
A recently-published article in Thin Solid Films from KLA Instruments™ and EPFL investigates the relationship between film stress, film thickness and grain size for thin indium tin oxide (ITO) films.
In a preproof in journal Thin Solid Films, researchers have realized the epitaxial TiN films on (100) Si by reactive pulsed laser deposition (PLD).