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DSA patterns line pitches down to 18nm

DSA patterns line pitches down to 18nm
Imec has demonstrated the capability of directed self-assembly (DSA) to pattern line/spaces with a pitch as small as 18nm, using a high-chi block copolymer (high-χ BCP) based process under high volume manufacturing (HVM) conditions.
An optimized dry-etch chemistry was used to successfully transfer the pattern into an underlying thick SiN layer – which will enable further defectivity inspection. These results confirm the potential of DSA to complement traditional top-down patterning for the industrial fabrication of sub-2nm technology nodes.
The further miniaturization of devices will require the patterning of features that have critical pitches below 20nm. For these small feature sizes, the traditional top-down lithography patterning is increasingly challenged with issues that are inherent to the reaction of the photosensitive materials with light – such as stochastic printing failures and line-edge/line-width roughness (LER ....

Hyo Seon Suh , Merck Kga , Merck Kgaa , Brewer Science Inc , Semiconductor Solutions Co Ltd , Tokyo Ohka Kogyo Co , Nissan Chemical Corp , Tokyo Electron Ltd , Tokyo Ohka Kogyo , Exploratory Patterning Materials , ஹயோ சீன் ஸ , மெர்க் க்க , மதுபானம் அறிவியல் இன்க் , குறைக்கடத்தி தீர்வுகள் இணை லிமிடெட் , நிசான் இரசாயன கார்ப் , டோக்கியோ எதிர் மின்னணு லிமிடெட் ,

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