Latest Breaking News On - வடிவமைப்பு நடைமேடை வளர்ச்சி - Page 1 : vimarsana.com

Share this article (PRNewsfoto/Rambus Inc.) SAN JOSE, Calif., April 21, 2021 /PRNewswire/  Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the Rambus HBM2E memory interface subsystem, consisting of a fully-integrated PHY and controller, is silicon proven on Samsung s advanced 14/11nm FinFET process. Leveraging over 30 years of signal integrity expertise, the Rambus solution operates up to 3.2 Gbps, delivering 410 GB/s of bandwidth. This performance meets the terabyte-scale bandwidth needs of accelerators targeting the most demanding AI/ML training and high-performance computing (HPC) applications. Our partnership with Rambus brings together industry-leading memory interface design expertise with Samsung s state-of-the-art process and packaging technologies, said Jongshin Shin, vice president of Design Platform Development at Samsung Electronics. Designers of AI and HPC systems can implement pla

Jongshin shinMatt jonesCori pasinettiRambus corporate communicationsRambus incDesign platform development at samsung electronicsDesign platform developmentMemory controllerMemory interfaceRambus interfaceமேட் ஜோன்ஸ்வடிவமைப்பு நடைமேடை வளர்ச்சி இல் சாம்சங் மின்னணுவியல்வடிவமைப்பு நடைமேடை வளர்ச்சிநினைவு கட்டுப்படுத்திநினைவு இடைமுகம்