Renesas develops write technologies for embedded STT-MRAM :

Renesas develops write technologies for embedded STT-MRAM

Renesas has developed two technologies that are able to reduce the energy and voltage application time for the write operation of spin-transfer torque magnetic random-access memory (STT-MRAM).

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San Francisco , California , United States , , International Electron Devices Meeting , Electron Devices Meeting , Himram , Memory , Research , Microcontrollers , Tower , Write Technology ,

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