Renesas Develops Embedded MRAM Macro that Achieves over 200MHz Fast Random-Read Access and a 10.4 MB/s Fast Write Throughput for High Performance MCUs
TOKYO, Japan, February 21, 2024 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations. Fabricated using a 22-nm process, the microcontroller unit (MCU) test chip includes…
Source: eejournal.com
