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Renesas Develops Embedded MRAM Macro that Achieves over 200MHz Fast Random-Read Access and a 10.4 MB/s Fast Write Throughput for High Performance MCUs

TOKYO, Japan, February 21, 2024 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations. Fabricated using a 22-nm process, the microcontroller unit (MCU) test chip includes… ....

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Renesas Develops Embedded MRAM Macro that Achieves over 200MHz Fast Random-Read Access and a 10.4 MB/s Fast Write Throughput for High Performance MCUs

High-speed Circuit Technologies and Silicon Measurement Results of MCU Test Chip Presented in ISSCC 2024

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Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications

TOKYO, Japan, June 16, 2022 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit)… ....

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Renesas fabs 22nm STT-MRAM

Renesas has developed a 22nm process for embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM). The test chip includes a 32Mbit em ....

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Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications – Consumer Electronics Net

Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications – Consumer Electronics Net
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