New Transistor Structures At 3nm/2nm
New Transistor Structures At 3nm/2nm Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult. Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, starting either next year or in...
Source: semiengineering.com