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Foundry Wars Begin Intel’s re-entry has kicked the competition into high gear, with massive spending on equipment and new fabs. Leading-edge foundry vendors are gearing up for a new, high-stakes spending and technology race, setting the stage for a possible shakeup across the semiconductor manufacturing landscape. In March, Intel re-entered the foundry business, positioning itself against Samsung and TSMC at the leading edge, and against a multitude of foundries working at older nodes. Intel announced plans to build two new fabs with a capital spending budget set at $20 billion in 2021. Ear...

New Transistor Structures At 3nm/2nm Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult. Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, starting either next year or in...