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This study investigates the use of a specially developed P-I-N diode to measure displacement damage in a silicon substrate caused by irradiation from 400 MeV/u 20Ne, 500 MeV/u 40Ar, 290 MeV/u 12C, and 6, 9, 12, 20 MeV electrons. Various energy levels of heavy ions attenuated by PMMA beam degraders were assessed. The study focuses on the forward voltage shift of the P-I-N diode as an indicator of displacement damage in silicon. Comparisons were made with simulated fluences, and the associated particle displacement Kinetic Energy Released per unit Mass (KERMA) to the silicon substrate. The inves...

Los Angeles CA (SPX) Apr 05, 2024 - In a significant advancement for space technology, EPC Space has introduced the EPC7009L16SH, a cutting-edge Radiation Hardened Gallium Nitride (GaN) gate driver integrated circuit (IC) developed on

Oncoinvent AS, a clinical stage company advancing alpha emitter therapy across a variety of solid cancers, today announced the appointment of newly elected members of its Board of Directors (BOD) and the formation of a Scientific and Clinical...

OSLO, Norway--(BUSINESS WIRE)--Feb 21, 2024--

Oncoinvent AS, a clinical stage company advancing alpha emitter therapy across a variety of solid cancers, today announced the presentation of initial safety data from the ongoing Phase 1 clinical trial evaluating the recommended dose, safety and...