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Following China's move on May 21 to prevent its critical IT infrastructure operators from procuring Micron products, citing national security concerns, China-based securities firms belive that it will drive the process of domestic substitution in China's low- to mid-end memory sector.
NAND flash chipmakers including Samsung Electronics, SK Hynix, and China's Yangtze Memory Technologies (YMTC) are considering raising their quotes, according to sources at memory module makers.
The G7 summit of this year took place in Hiroshima, Japan, accompanied by Micron's announcement of a US$3.6 billion investment to introduce ASML's extreme ultraviolet (EUV) equipment at Micron's Hiroshima plant, aiming to build the next generation of DRAM production lines. Additionally, the "Hiroshima Accord" was jointly announced by the United Kingdom and Japan, signifying a deepening of the investment scale, worth billions of dollars, in the semiconductor and clean energy sectors. At a time of heightened geopolitical tensions between the Unit...
Samsung Electronics has announced mass production of 16-gigabit (Gb) DDR5 DRAM chips built using the company's 12nm-class process technology.
Solidigm is expanding its D5 series with the Solidigm D5-P5430, a new solid-state storage drive (SSD) optimized for mainstream and read-intensive workloads.