ROHM's New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off -February 15, 2024 at 05:01 pm EST
Ideal for automotive LED headlamps and other high-speed switching applicationsSanta Clara, CA and Kyoto, Japan, Feb. 15, 2024 -- ROHM Semiconductor today announced new 100V breakdown Schottky...