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CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon proce
CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon proce
CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon process close to state-of-the-art GaN/SiC performance
Technology suitable for 5G/6G infrastructure, satcom, radar for UAV detection and earth observation
Related Keywords
France ,
San Francisco ,
California ,
United States ,
Erwan Morvan ,
International Electron Devices Meeting ,
Electron Devices ,
In Situ Sin Gate Dielectric ,
Low Temperature Ohmic ,