Transphorms GaN First to Hit Short Circuit Robustness Milest

Transphorm Inc. Nasdaq TGAN a global leader in GaN power semiconductors the future of next generation power systems today announced it has demonstrated up to 5 microsecond short circuit withstand time SCWT on a GaN power transistor with a patented technology.

Related Keywords

United States , Goleta , California , Aizu , Fukushima , Japan , Heather Ailara , Motoshige Maeda , Umesh Mishra , Wechat Transphorm , Rd Management Department , Nasdaq , Twitter , Yaskawa Electric Corporation , Transphorm Inc , Corporate Technology Division , Transphorm Gan , Department Manager , Fundamental Rd Management Department , Power Gan , Yaskawa Electric , Media Contact , Transphorm Gan Short Circuit Motor Drive Applications Collaboration Yaskawa Electric Corporatin Power Semiconductors Systems Withstand Time Scwt Inverters Servo Motors Industrial Automotive Powertrains Silicon Carbide Sic Mosfet Tam Motoshige Maeda Umesh Mishra Revolution Mechatronic Solutions ,